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Atolys - Atomic-Scale Analysis of SiC-Oxide Interface for Improved High-Power MOSFETs

Research Project
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01.01.2015
 - 31.12.2015

In the Atolys Argovia project, teams of scientists led by Professor Stefan Goedecker from the Department of Physics at the University of Basel are investigating specific components of transistors that are designed for high currents. In the project, researchers from the University of Basel, the Paul Scherrer Institute and ABB in Baden-Dättwil combine theoretical and experimental methods to examine interfaces between silicon carbide and silicon dioxide in semiconductors. The studies, which aim to provide the most precise data about the structure of the semiconductors, will help to further improve devices designed for high currents. ABB researches high-performance semiconductors The global trend for increased use of sustainable energies means that innovative and efficient systems must be developed for generating and distributing power. The ABB Corporate Research Center (CRC) in the Canton of Aargau conducts research in this area and develops power electronics that can also intelligently handle large currents at high voltages. A large part of these efforts is devoted to developing and researching materials for high-performance semiconductors. These are used, for example, to convert direct current into alternating current. This is necessary, among other things, to feed power generated through photovoltaics into the grid or to transport power across large distances. Silicon carbide - the material of the future The semiconductors of the future may not be made from silicon, but from silicon carbide. Its properties allow smaller devices to be built that are easier to cool and have less resistance. In special semiconductor elements (MOSFETs), the boundary layer between silicon carbide and the insulating material silicon dioxide plays an important role. There is empirical evidence that the number of defects can be reduced with nitrogen and other elements. The microscopic mechanisms that lead to this passivation - the formation of a protective layer - are as yet unknown. To investigate these mechanisms and thus to clarify related questions, the scientific team - including Professor Goedecker, Professor Thomas Jung (PSI), and Dr. Jörg Lehmann and Dr. Holger Bartolf (both ABB) - will combine theoretical simulations with experimental studies and analyze the atomic structure of the boundary layers.

Members (2)

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Stefan Goedecker

Principal Investigator
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Thomas Jung

Co-Investigator