Research focuses on low-temperature quantum transport experiments investigating quantum coherence, electron and holes spins as well as nuclear spins and interactions in semiconductor nanostructures. Ongoing projects include
-Ge/Si nanowires gate defined dots
-Si finFET transistors
-Ge/Si planar gate defined dots
-GaAs quantum dots
Experiments investigate quantum transport in semiconductor nanostructures which are fabricated in-house or in collaborations. Experiments are typically performed at kelvin or millikelvin temperatures in magnetic fields. Measurements are done using electronic low-noise techniques and may involve nanosecond-pulsing and microsecond readout schemes. An ERC Starting Grant from the first ERC call was awarded to our group and boosted our research from 2008-2013 (press release)
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